A SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

The present invention relates in general to semiconductor light emitting devices and in particular to methods of altering the spatial emission patterns of such devices. A known problem with these prior art light emitting devices (and laser diodes in general) is that their far-field emission patterns are elliptical and astigmatic in nature. The present invention addresses this problem by refractive index perturbations in the semiconductor device aligned in a direction substantially transverse to the light emission direction to achieve a desired spatial distribution of the emission.