| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor circuit constituted of a MOS-FET capable of achieving both high-speed switching characteristics and small subthreshold current characteristics. <P>SOLUTION: The semiconductor ciruit having a logical circuit 1 constituted of MOS-FET Q1 and Q2 is provided with voltage supplying means 15 and 13 for supplying voltages V<SB>pp</SB>and V<SB>bb</SB>different from the back gate bias voltages Vcc and Vss of the MOS-FET Q1 and Q2, and a switching means 10 for switching the back gate bias voltages of the MOS-FET Q1 and Q2 to voltages V<SB>cc</SB>and V<SB>ss</SB>and the voltages V<SB>pp</SB>and V<SB>bb</SB>different from voltages V<SB>cc</SB>and V<SB>ss</SB>. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
