| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a variation in the threshold voltage of a transistor from having an effect on a detected temperature. <P>SOLUTION: This temperature detection circuit comprises a temperature detection element D3 where a forward voltage varies as a temperature varies, a first FETM 3 connected in series with a temperature detection element D3 and lowering a voltage between gate-source electrodes, a second FETM 2 having a threshold voltage substantially identical to that of the first FETM 3 and current density per unit area higher than that of the first FETM 3 and performing temperature detection based on the fact whether the voltage between the gate-source electrodes is higher than the total voltage drop of the temperature detection element D3 and the first FETM 3 or not, and a circuit M1 for outputting a signal indicative of whether a threshold temperature is exceeded or not based on the operation of the second FETM 2. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
