| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the reliability of a semiconductor device is deteriorated by a void which is formed in the interlayer insulating film formed between electrodes a distance between which is shortened accompanied by the microfabrication of a semiconductor element which constitutes a semiconductor device. SOLUTION: An insulator layer 21 is formed in the upper part of a semiconductor substrate 11. Besides, in this upper part, a first conductive material 14 and a second conductive material 15 are laminated and formed. A coating layer 16 with insulation is formed at the side edge of the first conductive material 14 so that these may constitute an electrode 10. The side edge of the second conductive material 15 is formed inside the side edge of the first conductive material 14. An area which is brought into contact with the first conductive material 14 and the second conductive material 15 is smaller than the area of the upper surface of the first conductive material 14. COPYRIGHT: (C)2006,JPO&NCIPI
|
