发明名称 BI-DIRECTIONAL ESD PROTECTION CIRCUIT
摘要 <p>An electrostatic discharge (ESD) device (10) for protecting an input/output terminal of a circuit has a first transistor (Ml) with an integrated silicon-controlled rectifier (SCR) coupled between the input/output (I/O) terminal (14) of the circuit and a node (12) and a second transistor (M2) with an integrated silicon-controlled rectifier coupled between the node (12) and a negative terminal of a supply voltage, wherein the silicon-controlled rectifier of the first transistor triggers in response to a negative ESD voltage and the silicon-controlled rectifier of the second transistor triggers in response to a positive ESD voltage.</p>
申请公布号 WO2006026390(A1) 申请公布日期 2006.03.09
申请号 WO2005US30331 申请日期 2005.08.26
申请人 TEXAS INSTRUMENTS INCORPORATED;PAULETTI, TIMOTHY, PATRICK;PENDHARKER, SAMEER;CHEN, WAYNE, TIEN-FENG;BRODSKY, JONATHAN;STEINHOFF, ROBERT 发明人 PAULETTI, TIMOTHY, PATRICK;PENDHARKER, SAMEER;CHEN, WAYNE, TIEN-FENG;BRODSKY, JONATHAN;STEINHOFF, ROBERT
分类号 (IPC1-7):H01L23/62;H01L29/76 主分类号 (IPC1-7):H01L23/62
代理机构 代理人
主权项
地址