| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a solid-state component and a solid-state component device whereby exfoliation is not caused by a difference in coefficient of thermal expansion. <P>SOLUTION: Rh layers 27A are provided in a lattice pattern on a surface of a p-type GaN contact layer, so that a p-type GaN contact layer 25 and a p-side multilayer electrode 27 make ohmic contact to each other with an excellent bonding property. Further, since the Rh layers 27A are provided in a lattice pattern, it is possible to reduce stress generated according to a difference in a coefficient of thermal expansion from a GaN semiconductor layer and stably inject current to a multilayer 23 without causing a reduction in bonding strength or exfoliation even during reflow bonding at a high temperature. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
