| 摘要 |
PROBLEM TO BE SOLVED: To provide a CMP process metal impurity remover which is excellent in performance for removing metal impurities attached to the surface of a semiconductor substrate subjected to a CMP treatment without having any adverse effect on the semiconductor substrate in the manufacture of semiconductor elements, such as ICs, LSIs and the like, and liquid crystal panel elements. SOLUTION: The metal impurity remover, which is used after a CMP treatment is carried out, consists of a hydrofluorocarbon and an oxygen-containing organic compound. Further, it is preferable that ethanol or propylene glycol monomethyl ether is used as the above oxygen-containing organic compound. COPYRIGHT: (C)2006,JPO&NCIPI
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