SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device that can have element size reduced. SOLUTION: Inside a silicon carbide semiconductor base substance formed on a substrate region 1, comprising an n+-type silicon carbide, an n--type drain region 2 contacts with an n+-type source region 4 via a p-type base region 3, a gate electrode 6 contacting with the drain region 2 and the source region 4 via an insulating film 5, a drain electrode 8 connected to the drain region 2 via the substrate region 1, and a source electrode 7 connected with the source region 4 are provided. A Schottky junction region 9, connected to the source electrode 4 and forming the Schottky junction 100 with the drain region 2, is provided, and a Schottky junction 120, blocking the current flowing from the source electrode 7 to the drain region 2 via the base region 3, is provided between the source electrode 7 and the base region 3 in the semiconductor device. COPYRIGHT: (C)2006,JPO&NCIPI