| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory which enables turning into a large capacity and high-speed writing. SOLUTION: The magnetic memory includes a memory cell which comprises a magnetic recording layer 4 whose direction of magnetization changes according to external magnetic field, a magnetization fitted layer 8 in which direction of magnetization is fixed, a storage element 2 comprising a nonmagnetic intermediate layer 6 provided between the magnetic recording layer and the magnetization fixed layer, a writing wiring 20 which is provided on the side opposite to the nonmagnetic intermediate layer of the magnetic recording layer and in which a writing current flows, and a yoke 25 provided to contact the surface of the writing wiring such as on a side opposite to the magnetic record layer. A pair of facing side surfaces of the storage element are set on the same plane with respective pair of facing side surfaces of the writing wiring and yoke, with a 5 or larger for the non-permeability of the magnetic recording layer. COPYRIGHT: (C)2006,JPO&NCIPI
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