| 摘要 |
PROBLEM TO BE SOLVED: To provide a method where, at the time when the surface of copper wiring buried into a recessed part formed at an insulation film is subjected to palladium substitution plating, the etching in the surface of the copper wiring is suppressed, and a semiconductor device capable of maintaining satisfactory electrical properties over a long period is produced. SOLUTION: Copper is buried into a recessed part 200 formed by subjecting an insulation film such as an SiOC film 21 to etching, so as to form copper wiring 25. Thereafter, using a substitution plating liquid obtained by dissolving palladium into a solution of an organic acid having a carboxy group, the surface of the copper wiring 25 buried into the recessed part 200 is subjected to palladium substitution plating. Then, an adhesive layer 27 is formed on the surface of the copper wiring 25 on which a palladium film is formed using an electroless plating liquid. In this case, by the selection of the organic acid, the etching of the copper wiring 25 at the time of the palladium substitution plating can be suppressed. COPYRIGHT: (C)2006,JPO&NCIPI |
