| 摘要 |
PROBLEM TO BE SOLVED: To provide a device with longer life and more excellent device characteristics by making uniform the composition distribution of a nitride semiconductor layer, for example, the crystallinity or In content of an active layer over a wide wavelength range. SOLUTION: A nitride semiconductor laser device comprises, on the main surface of a nitride semiconductor substrate, a nitride semiconductor layer of first conductivity type, an active layer, a nitride semiconductor layer of second conductivity type which is different from first conductivity type, and a stripe-like ridge included in the nitride semiconductor layer of second conductivity type. The main surface of the nitride semiconductor substrate 1 has an off angle a (θ<SB>a</SB>) relative to the reference crystal face almost in parallel with at least the stripe-like ridge, or the main surface has an off angle b (θ<SB>b</SB>) almost perpendicularly to the off angle a (θ<SB>a</SB>). COPYRIGHT: (C)2006,JPO&NCIPI
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