| 发明名称 |
SILICON EPITAXIAL WAFER AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<p>A silicon epitaxial wafer is provided by forming an epitaxial layer composed of a silicon single crystal by epitaxial growing, on a front plane of a silicon single crystal wafer which is cut out from a CZ silicon ingot doped with carbon within a concentration range of 5×10<sup</p> |
| 申请公布号 |
WO2006025409(A1) |
申请公布日期 |
2006.03.09 |
| 申请号 |
WO2005JP15801 |
申请日期 |
2005.08.30 |
| 申请人 |
SUMCO CORPORATION;SADAMITSU, SHINSUKE;HOURAI, MASATAKA |
发明人 |
SADAMITSU, SHINSUKE;HOURAI, MASATAKA |
| 分类号 |
H01L21/322;H01L21/205;H01L27/146 |
主分类号 |
H01L21/322 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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