发明名称 THIN FILM TRANSISTOR ARRAY PANEL
摘要 Improved thin film transistor array panels are provided. In one embodiment, a panel includes a plurality of gate lines, data lines, and a plurality of switching elements connected to the gate lines and the data lines. An interlayer insulating layer is formed between the gate lines and the data lines. A passivation layer covering the gate lines, the data lines, and the switching elements is also provided having a plurality of first contact holes exposing portions of the data lines, wherein the switching elements and the pixel electrodes are connected through the first contact holes. A plurality of contact assistants are formed on the passivation layer and are connected to the data lines through a plurality of second contact holes in the passivation layer. A plurality of auxiliary lines are connected to the data lines through a plurality of third contact holes in the interlayer insulating layer.
申请公布号 KR20060021560(A) 申请公布日期 2006.03.08
申请号 KR20040070341 申请日期 2004.09.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JUNG, JIN GOO;PARK, KYUNG MIN;YOU, CHUN GI
分类号 G02F1/1345 主分类号 G02F1/1345
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