FREQUENCY CONVERTING CIRCUIT OF DIRECT CONVERSION RECEPTION, SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF, AND DIRECT CONVERSION RECEIVER

摘要

A rectangular parallelepiped p-channel MOS transistor 21 having a height of H B and a width of W B is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the p-channel MOS transistor 21. A source and a drain are formed on both sides of a gate electrode 26 to form a MOS transistor. The MOS transistor configures a direct conversion receiving circuit. Thus, an error between an I signal and a Q signal in a direct conversion receiving frequency conversion circuit can be reduced.