发明名称 |
Process for reclaiming semiconductor wafers and reclaimed wafers |
摘要 |
The present invention is directed to a process for reclaiming for reuse a single crystal silicon wafer removed from an aborted semiconductor device fabrication process. The process includes (a) subjecting the wafer to an oxide growth step to form an oxide layer having a thickness greater than 2 nanometers, (b) thinning the wafer by removing material from substantially the entire front surface to provide a thinned wafer having a thinned precipitate free zone, and (c) polishing the front surface of the thinned wafer to a specular finish.
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申请公布号 |
US7008874(B2) |
申请公布日期 |
2006.03.07 |
申请号 |
US20010022967 |
申请日期 |
2001.12.13 |
申请人 |
MEMC ELECTRONICS MATERIALS, INC. |
发明人 |
FALSTER ROBERT J. |
分类号 |
H01L21/302;H01L21/00;H01L21/304;H01L21/306 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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