发明名称 Semiconductor wafer treatment method and apparatus therefor
摘要 In the ozone water treatment process, the silicon wafer is treated with the first ultra-pure water that includes ozone. The first ultra-pure water is refined by the ultraviolet ray sterilization method. The first ultra-pure water includes total organic carbon content of more than 1 mug/liter and not more than 20 mug/liter, so that the silicon wafer of the predetermined degree of cleanliness is obtained. The silicon wafer is treated by using the second ultra-pure water that has a lower TOC value than the first ultra-pure water in the ultra-pure water rinsing process (including the chemical solution cleaning process as required). The second ultra-pure water is refined by the ultraviolet ray oxidization method, and includes total organic carbon content with a concentration of 1 mug/liter or less. Thus the silicon wafer of the predetermined degree of cleanliness is obtained.
申请公布号 US2006042654(A1) 申请公布日期 2006.03.02
申请号 US20050213809 申请日期 2005.08.30
申请人 SUMCO CORPORATION 发明人 TAKEMURA MAKOTO;FUKUDA YASUO;SOUDA KAZUAKI;IWAHASHI JUNICHIRO;OKUDA KOICHI
分类号 C23G1/00;B08B3/00 主分类号 C23G1/00
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