| 摘要 |
A white LED of a blue and yellow light emitting (structure) layer stacked structure includes a sapphire substrate, or gallium nitride substrate, or silicon carbide substrate, or silicon substrate; a buffer layer formed on the substrate; an N type gallium nitride epitaxial layer formed on the buffer layer; an N doped Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N quarternary alloy formed on the N type gallium nitride epitaxial layer; a blue light emitting structure layer which contains one or more In<SUB>x</SUB>Ga<SUB>1-x</SUB>N/Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N quantum well(s) formed on the N type Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N layer; a yellow light emitting structure layer which contains one or more In<SUB>y</SUB>Ga<SUB>1-y</SUB>N/Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N quantum well(s) formed on the In<SUB>x</SUB>Ga<SUB>1-x</SUB>N/Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N quantum well structure; or alternatively, a yellow light emitting structure layer which contains one or more In<SUB>y</SUB>Ga<SUB>1-y</SUB>N/Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N quantum well(s) being formed on the N type Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N layer first, and then a blue light emitting structure layer which contains one or more In<SUB>x</SUB>Ga<SUB>1-x</SUB>N/Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N quantum well(s) being formed on the In<SUB>y</SUB>Ga<SUB>1-y</SUB>N/Al<SUB>a</SUB>In<SUB>b</SUB>Ga<SUB>1-a-b</SUB>N quantum well(s) structure; a P type Al<SUB>0.1</SUB>Ga<SUB>0.9</SUB>N and a P type GaN cap layer formed on the top.
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