Method for forming a nanocrystal floating gate for a flash memory device

摘要

One embodiment of a method used to form a floating gate for a memory device comprises forming a crystallization nucleus seed layer using a process comprising disilane (Si₂H₆), then converting the seed layer into a plurality of electrically-isolated silicon nanocrystals using a process comprising silane (SiH₄). The method described uses lower temperatures than previous silicon nanocrystal formation with improved uniformity of the completed silicon nanocrystals.