发明名称 Distributed bragg reflector for optoelectronic device
摘要 A Distributed Bragg Reflector (DBR) that has relatively low light absorption, relatively low electrical resistance, and/or relatively good thermal conductivity. The DBR may include a first mirror layer and a second mirror layer, with an interface therebetween. A step transition is provided in the aluminum concentration and in the doping concentration at or near the interface between the first mirror layer and the second mirror layer. To reduce optical absorption, the interface between the first and second mirror layers may be positioned at or near a null in the optical electric field within the DBR. A graded junction may also be provided. The graded junction may be more lightly doped, have a graded aluminum concentration, and may be placed at or near a peak in the optical electric field.
申请公布号 US2006045162(A1) 申请公布日期 2006.03.02
申请号 US20050091656 申请日期 2005.03.28
申请人 FINISAR CORPORATION 发明人 JOHNSON RALPH H.
分类号 H01S3/08 主分类号 H01S3/08
代理机构 代理人
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