发明名称 |
SELF-BIASING TRANSISTOR STRUCTURE AND SRAM CELL |
摘要 |
By providing a self-biasing semiconductor switch, an SRAM cell (450) having a reduced number of individual active components may be realized. In particular embodiments, the self-biasing semiconductor device may be provided in the form of a double channel field effect transistor (400) that allows the formation of an SRAM cell (450) with less than six transistor elements and, in preferred embodiments, with as few as two individual transistor elements. |
申请公布号 |
WO2006022915(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
WO2005US15294 |
申请日期 |
2005.04.29 |
申请人 |
ADVANCED MICRO DEVICES, INC.;WIRBELEIT, FRANK;HORSTMANN, MANFRED;HOBERT, CHRISTIAN |
发明人 |
WIRBELEIT, FRANK;HORSTMANN, MANFRED;HOBERT, CHRISTIAN |
分类号 |
(IPC1-7):H01L29/78;H01L27/11;G11C11/412;H01L29/10 |
主分类号 |
(IPC1-7):H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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