| 摘要 |
A thin film transistor of the present invention includes a semiconductor thin film ( 8 ); a gate insulating film ( 7 ) formed on one surface of the semiconductor thin film ( 8 ); a gate electrode ( 6 ) formed to be opposite to the semiconductor thin film ( 8 ) through the gate insulating film ( 7 ); a source electrode ( 15 ) and a drain electrode ( 16 ) electrically connected to the semiconductor thin film ( 8 ); a source region; a drain region; and a channel region. The thin film transistor further includes an insulating film ( 9 ) formed on a peripheral portion corresponding to at least the source region and the drain region of the semiconductor thin film ( 8 ), and having a contact hole ( 10, 11 ) through which at least a part of each of the source region and the drain region is exposed wherein the source electrode ( 15 ) and the drain electrode ( 16 ) are connected to the semiconductor thin film ( 8 ) through the contact hole ( 10, 11 ).
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