METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device, characterized in that it comprises a step of etching an insulating film, to form a concave portion, a step of filling the concave portion with copper, to form a copper wiring, a step of subjecting the surface of the copper filling the above concave portion to a displacement plating with palladium, by the use of a displacement plating solution prepared by dissolving palladium in a solution of an organic acid having a carboxyl group, and a step of forming an adhered layer on the surface of the copper layer being displacement-plated with palladium by the use of an electroless plating solution.