| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a material capable of reducing the environmental effect on a chemical amplification type resist layer used for the electron beam or EUV lithography; a laminated body; and a method for forming a resist pattern. <P>SOLUTION: The protective film forming material for the resist layer used for the electron beam or EUV lithography is obtained by dissolving a fluorine-containing polymer (F) in an organic solvent. In the laminated body, a resist layer containing a base material component (A) and a component of an acid-generating agent (B) which generates an acid upon exposure, and a protective film formed from the protective film forming material are laminated on a substrate in this order. The method for forming the resist pattern comprises forming the resist layer on the substrate, then forming the protective film on the resist layer by using the protective film forming material, selectively exposing the resist layer to electron beams or EUV through the protective layer, then after subjecting to PEB (post exposure bake), removing the protective film, and developing the resist layer to form the resist pattern. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
