摘要 |
A process in which an aluminum nitride crystal can be produced under moderate pressure and temperature conditions. There is provided a process for producing an aluminum nitride crystal, comprising forming and growing of an aluminum nitride crystal through reaction, in the presence of a nitrogenous gas, of the nitrogen with aluminum in a flux containing the following components (A) and (B) or in a flux containing the following component (B): (A): element(s) of at least either an alkali metal or an alkaline earth metal group, and (B): at least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
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申请人 |
OSAKA UNIVERSITY;KANSAI TECHNOLOGY LICENSING ORGANIZATION CO., LTD.;MORI, YUSUKE;SASAKI, TAKATOMO;KAWAMURA, FUMIO;YOSHIMURA, MASASHI;KAWAHARA, MINORU;ISOBE, HIROAKI |
发明人 |
MORI, YUSUKE;SASAKI, TAKATOMO;KAWAMURA, FUMIO;YOSHIMURA, MASASHI;KAWAHARA, MINORU;ISOBE, HIROAKI |