发明名称 PROCESS FOR PRODUCING ALUMINUM NITRIDE CRYSTAL AND ALUMINUM NITRIDE CRYSTAL OBTAINED THEREBY
摘要 A process in which an aluminum nitride crystal can be produced under moderate pressure and temperature conditions. There is provided a process for producing an aluminum nitride crystal, comprising forming and growing of an aluminum nitride crystal through reaction, in the presence of a nitrogenous gas, of the nitrogen with aluminum in a flux containing the following components (A) and (B) or in a flux containing the following component (B): (A): element(s) of at least either an alkali metal or an alkaline earth metal group, and (B): at least one element selected from the group consisting of tin (Sn), gallium (Ga), indium (In), bismuth (Bi) and mercury (Hg).
申请公布号 WO2006022302(A2) 申请公布日期 2006.03.02
申请号 WO2005JP15366 申请日期 2005.08.24
申请人 OSAKA UNIVERSITY;KANSAI TECHNOLOGY LICENSING ORGANIZATION CO., LTD.;MORI, YUSUKE;SASAKI, TAKATOMO;KAWAMURA, FUMIO;YOSHIMURA, MASASHI;KAWAHARA, MINORU;ISOBE, HIROAKI 发明人 MORI, YUSUKE;SASAKI, TAKATOMO;KAWAMURA, FUMIO;YOSHIMURA, MASASHI;KAWAHARA, MINORU;ISOBE, HIROAKI
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