| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a storage device which detects a decrease in the reliability of a memory, before the occurrence of abnormal operation and notifies the outside of the detection result. <P>SOLUTION: An error correcting circuit 12 performs error correction when data are read from a flash memory 11, and outputs an output signal to a toggle output circuit 15 when any error correction is generated. The toggle output circuit 15 alternately outputs a latch signal for latching the contents of an address register 13 for designating the reading address of the flash memory 11 to an address latch circuit 14a and an address latch circuit 14b. The address latch circuits 14a and 14b hold the contents of the address register 13. A comparator circuit 16 compares the contents of the address latch circuit 14a with the address latch circuit 14b, and when detecting that the contents of those address latch circuits are not matched, the comparator circuit 16 outputs a count pulse to a counter 17. When a value to be counted by the counter 17 reaches a predetermined value, the counter 17 outputs an interrupting signal 20 to notify the outside of the result of the counting. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
