| 摘要 |
A semiconductor processing component includes a substrate and a layer overlying the substrate. The layer has a composition ReA<SUB>y</SUB>O<SUB>1.5+2y</SUB>, wherein Re is Y, La, a Lanthanoid series element, or a combination thereof, A is (Si<SUB>1-a</SUB>Ge<SUB>a</SUB>), 0.25<=y<=1.2, and 0<=a<=1.
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