CMOS device having different amounts of nitrogen in the NMOS gate dielectric layers and PMOS gate dielectric layers

摘要

The present invention provides a complementary metal oxide semiconductor (CMOS) device, a method of manufacture therefor, and an integrated circuit including the same. The CMOS device ( 100 ), in an exemplary embodiment of the present invention, includes a p-channel metal oxide semiconductor (PMOS) device ( 120 ) having a first gate dielectric layer ( 133 ) and a first gate electrode layer ( 138 ) located over a substrate ( 110 ), wherein the first gate dielectric layer ( 133 ) has an amount of nitrogen located therein. In addition to the PMOS device ( 120 ), the CMOS device further includes an n-channel metal oxide semiconductor (NMOS) device ( 160 ) having a second gate dielectric layer ( 173 ) and a second gate electrode layer ( 178 ) located over the substrate ( 110 ), wherein the second gate dielectric layer ( 173 ) has a different amount of nitrogen located therein. Accordingly, the present invention allows for the individual tuning of the threshold voltages for the PMOS device ( 120 ) and the NMOS device ( 160 ).