| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method capable of efficiently forming a required pattern with a high degree of accuracy independently of the shape of a formed pattern. <P>SOLUTION: A coating type carbon film 2 is spin-coated and baked on a semiconductor substrate 1 and a positive ArF resist film 4 is spin-coated and prebaked on the carbon film 2. The resist film 4 is exposed with ArF excimer laser light 5 and patterned by development. After EB (electron beam) curing of the resist film 4, a photosensitive polysilazane film 7 is disposed on the carbon film 2 so as to cover the resist film 4 in such a way that the pattern recesses in the resist film 4 are nearly thoroughly filled. The polysilazane film 7 is exposed overall with ArF excimer laser light 8, humidified and developed to disclose the top face of the resist film 4, thereby patterning the polysilazane film 7. The resist film 4 and the carbon film 2 are etched using the polysilazane film 7 as a mask. <P>COPYRIGHT: (C)2004,JPO |
