发明名称 |
Method and apparatus for mobility enhancement in a semiconductor device |
摘要 |
A method and apparatus is presented that provides mobility enhancement in the channel region of a transistor. In one embodiment, a channel region ( 18 ) is formed over a substrate that is bi-axially stressed. Source ( 30 ) and drain ( 32 ) regions are formed over the substrate. The source and drain regions provide an additional uni-axial stress to the bi-axially stressed channel region. The uni-axial stress and the bi-axial stress are both compressive for P-channel transistors and both tensile for N-channel transistors. The result is that carrier mobility is enhanced for both short channel and long channel transistors. Both transistor types can be included on the same integrated circuit.
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申请公布号 |
US2006046366(A1) |
申请公布日期 |
2006.03.02 |
申请号 |
US20040925108 |
申请日期 |
2004.08.24 |
申请人 |
ORLOWSKI MARIUS K;VENKATESAN SURESH |
发明人 |
ORLOWSKI MARIUS K.;VENKATESAN SURESH |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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