Hosting structure of nanometric elements and corresponding manufacturing method

摘要

A hosting structure of nanometric components is described comprising
a substrate (1),
a first multispacer level (70) comprising a first plurality of spacers (5a) including first conductive spacers (5a) parallel to each other, and
at least a second multispacer level (71) realised above said first multispacer level (70) and comprising a second plurality of spacers (7) arranged transversally to said first plurality of spacers (5a) and including at least a lower discontinuous insulating layer (8) and an upper layer, including in turn second conductive spacers (11a). In particular, each pair of spacers (7) of the second multispacer level (71) defines with a spacer (5a) of the first multispacer level (70) a plurality of nanometric hosting seats (15) having at least a first and a second conduction terminal (13a, 13b) realised by portions of the first conductive spacers (5a) and of the second conductive spacers (11a) faced in the hosting seats (15). A method for manufacturing such a structure is also described.