| 发明名称 |
CHEMICAL VAPOR DEPOSITION FILM FORMED BY PLASMA CVD PROCESS AND METHOD FOR FORMING SAME |
| 摘要 |
<p>A method of forming a vapor deposited film of a silicon oxide on the surface of a substrate by holding the substrate to be treated in a plasma-treating chamber, and effecting the treatment with a chemical plasma by feedin</p> |
| 申请公布号 |
EP1630250(A1) |
申请公布日期 |
2006.03.01 |
| 申请号 |
EP20040722715 |
申请日期 |
2004.03.23 |
| 申请人 |
TOYO SEIKAN KAISYA, LTD. |
发明人 |
KOBAYASHI, AKIRA;NAMIKI, TSUNEHISA;HOSONO, HIROKO,;KURASHIMA, HIDEO,;INAGAKI, HAJIME;IEKI, TOSHIHIDE |
| 分类号 |
C23C16/40;B65D1/00;C23C16/02;C23C16/04;C23C16/511;C23C16/515;H01J37/32;(IPC1-7):C23C16/40 |
主分类号 |
C23C16/40 |
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