发明名称 |
Method for fabricating a vertical NROM cell |
摘要 |
A method for fabricating a vertical nitride read-only memory (NROM) cell. A substrate having at least one trench is provided. A spacer is formed over the sidewall of the trench. Subsequently, ion implantation is performed on the substrate using the spacer as a mask to form doping areas as bit lines in the substrate near its surface and the bottom of the trench. Bit line oxides are formed over each of the doping areas. After the spacer is removed, a conformable insulating layer as gate dielectric is deposited on the sidewall of the trench and the surface of the bit line oxide. Finally, a conductive layer as a word line is deposited over the insulating layer and fills in the trench.
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申请公布号 |
US7005701(B2) |
申请公布日期 |
2006.02.28 |
申请号 |
US20020318551 |
申请日期 |
2002.12.13 |
申请人 |
NANYA TECHNOLOGY CORPORATION |
发明人 |
HSIAO CHING-NAN;LIN CHI-HUI;HUANG CHUNG-LIN;CHUANG YING-CHENG |
分类号 |
H01L29/76;H01L21/336;H01L21/8234;H01L21/8246;H01L27/115;H01L27/148;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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