发明名称 |
Removing structures from a substrate comprises preparing a substrate with the structures to be removed, applying a sacrificial layer, and removing the structures and the sacrificial layer by polishing |
摘要 |
Removing structures from a substrate comprises preparing a substrate with the structures to be removed; applying a sacrificial layer; and removing the structures and the sacrificial layer by polishing. An Independent claim is also included for a process for removing one or more structured layers from a substrate. Preferred Features: The structures are made from a precious metal, especially Pt or Ir, an oxide of a precious metal, a dielectric material or a ferroelectric material. The sacrificial layer is a silicon oxide or silicon nitride layer.
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申请公布号 |
DE10022656(A1) |
申请公布日期 |
2001.11.08 |
申请号 |
DE20001022656 |
申请日期 |
2000.04.28 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
HARTNER, WALTER;AHLSTEDT, MATTIAS;SCHINDLER, GUENTHER;KASTNER, MARCUS;BEITEL, GERHARD;WEINRICH, VOLKER |
分类号 |
H01L21/02;H01L21/3105;H01L21/321;H01L21/8246;H01L27/108;(IPC1-7):H01L21/321;H01L21/306;H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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