发明名称 Removing structures from a substrate comprises preparing a substrate with the structures to be removed, applying a sacrificial layer, and removing the structures and the sacrificial layer by polishing
摘要 Removing structures from a substrate comprises preparing a substrate with the structures to be removed; applying a sacrificial layer; and removing the structures and the sacrificial layer by polishing. An Independent claim is also included for a process for removing one or more structured layers from a substrate. Preferred Features: The structures are made from a precious metal, especially Pt or Ir, an oxide of a precious metal, a dielectric material or a ferroelectric material. The sacrificial layer is a silicon oxide or silicon nitride layer.
申请公布号 DE10022656(A1) 申请公布日期 2001.11.08
申请号 DE20001022656 申请日期 2000.04.28
申请人 INFINEON TECHNOLOGIES AG 发明人 HARTNER, WALTER;AHLSTEDT, MATTIAS;SCHINDLER, GUENTHER;KASTNER, MARCUS;BEITEL, GERHARD;WEINRICH, VOLKER
分类号 H01L21/02;H01L21/3105;H01L21/321;H01L21/8246;H01L27/108;(IPC1-7):H01L21/321;H01L21/306;H01L21/824 主分类号 H01L21/02
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