发明名称 |
Method for reading uniform channel program (UCP) flash memory cells |
摘要 |
A flash memory cell can be read by selecting a local bit line. A read potential is applied to a memory cell transistor associated with the local bit line thereby generating a capacitive loading of the local bit line. The capacitive loading depends upon a magnitude of charge stored on a floating gate of the memory cell transistor. The capacitive loading of the local bit line can then be assessed to determine a state of the memory cell transistor, the state being related to the magnitude of the charge stored on the floating gate.
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申请公布号 |
US2006039199(A1) |
申请公布日期 |
2006.02.23 |
申请号 |
US20050213670 |
申请日期 |
2005.08.26 |
申请人 |
GRATZ ACHIM;ROEHRICH MAYK;KNOBLOCH KLAUS |
发明人 |
GRATZ ACHIM;ROEHRICH MAYK;KNOBLOCH KLAUS |
分类号 |
G11C16/04;G11C16/26 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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