| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device for performing stable and satisfactory junction by ultrasonic combined thermal press-fitting. <P>SOLUTION: The back face of a wafer is ground, and wet etching is carried out, and when a chip is joined to a junction object body using ultrasonic waves, surface roughness along the vibrating direction of ultrasonic waves is made substantially the same between chips, and ultrasonic wave combined thermal press-fitting is carried out, and the chip is joined through a golden ball bump to a lead frame. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
