| 摘要 |
<P>PROBLEM TO BE SOLVED: To correct the drawing position of a pattern with high accuracy regardless of the size of the pattern for multiple patterning. <P>SOLUTION: A grid GD is specified on a substrate SW where the pattern MP is drawn by multiple patterning. Prior to starting drawing, displacement of the drawing position of the pattern MP in a pattern area Z<SB>lm</SB>enclosed by the grid is detected to calculate an alignment correction value. After starting drawing, a pattern area to which the exposure point position coordinates of each micromirror belong on the substrate SW is identified in accordance with the relative position of an exposure area EA. After the corresponding pattern area is identified, the exposure position coordinates are corrected by the alignment correction value corresponding to the pattern area. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
