| 摘要 |
PROBLEM TO BE SOLVED: To facilitate the exact arrangement of a recrystallization region (21) formed on an amorphous or polycrystalline semiconductor thin film (12), and to form an alignment mark (15) capable of being utilized in a process for manufacturing an electronic element, e.g. a thin film transistor (98), in the recrystallization region. SOLUTION: The amorphous or polycrystalline semiconductor thin film (12) is formed on a substrate (11) having a surface composed of an insulating material, an alignment mark (15) is formed at a predetermined position of the amorphous or polycrystalline semiconductor thin film by irradiation with a first laser beam (19), and then a recrystallization region (21) having an enlarged particle size is formed at a predetermined position by irradiation with a second laser beam (20) by alignment based on the alignment mark. COPYRIGHT: (C)2006,JPO&NCIPI
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