| 摘要 |
PROBLEM TO BE SOLVED: To practically enable the analysis of a semiconductor by a nanometer scale. SOLUTION: In this analyzing method due to the measurement of resonance Raman scattering, an ultraviolet laser beam or extremity ultraviolet laser beam with a wavelength of 364 nm or 351 nm is used as a light source and a sample having a band gap of 3.3-5.1 eV is irradiated with the laser beam or the near-field beam originating therefrom. The resonance Raman scattered beam emitted by the interaction of the sample and the near-field beam is condensed by a near-field probe. COPYRIGHT: (C)2006,JPO&NCIPI
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