MULTI-GAS DISTRIBUTION INJECTOR FOR CHEMICAL VAPOR DEPOSITION REACTORS

摘要

A gas distribution injector [150] for chemical vapor deposition reactors [100] has precursor gas inlets [160, 165] disposed at spaced-apart locations on an inner surface [155] facing downstream toward a substrate [135], and has carrier openings [167] disposed between the precursor gas inlets [160, 165]. One or more precursor gases [180, 185] are introduced through the precursor gas inlets [160, 165], and a carrier gas [187] substantially nonreactive with the precursor gases is introduced through the carrier gas openings [167]. The carrier gas minimizes deposit formation on the injector [150]. The carrier gas openings may be provided by a porous plate [230] defining the surface or via carrier inlets [167] interspersed between precursor inlets. The gas inlets may removable [1780] or coaxial [1360].