| 摘要 |
PROBLEM TO BE SOLVED: To obtain an epitaxial wafer having a high gettering function by conducting an epitaxial growth and a high-temperature heat treatment and a high-temperature thermally-treated wafer. SOLUTION: A relational expression displaying a density to the radius of an oxygen deposit introduced in the case of a crystal growth in a silicon crystal having added nitrogen is led out from a nitrogen concentration and a cooling velocity near at 1,100°C during the crystal growth. The densities of the oxygen deposits obtained after the heat treatment can be predicted by imparting a relational expression displaying the densities at every radius of the led-out oxygen deposits, an oxygen concentration and a wafer heat-treatment process. The epitaxial-grown wafer and the high-temperature annealed wafer controlled in the proper densities of the oxygen deposits are obtained by using conditions predicted by employing the method. COPYRIGHT: (C)2006,JPO&NCIPI |
