| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device of high reliability by preventing the data holding characteristics of a memory cell having a trap film from deteriorating. SOLUTION: Firstly, an ONO film 12 accumulating charge is formed on a p-type semiconductor substrate 11. Then, an opening 12d is formed on the ONO film 12, and arsenic ions are implanted from the formed opening 12d to the semiconductor substrate 11 to form an n-type diffusion layer 14 at the lower part of each opening 12d of the semiconductor substrate 11. Next by forming a protective insulating film 15 so as to cover the end on the opening 12d side of the ONO film 12, and then heat-treating the semiconductor substrate 11 via the protective insulating film 15 under an atmosphere containing oxygen, to oxidize the upper part of each n-type diffusion layer 14, a bit line oxide film 16 is formed on the upper part of each n-type diffusion layer 14. Subsequently, a word line 17 is formed by forming a conductive film on the ONO film 12. COPYRIGHT: (C)2006,JPO&NCIPI
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