| 摘要 |
A semiconductor device (1) includes: a semiconductor substrate (10) having an active surface (10A) and a back surface (10B); an integrated circuit formed on the active surface (10A); a feedthrough electrode (12) penetrating the semiconductor substrate (10), and projecting from the active surface (10A) and the back surface (10B); a first resin layer (18) formed on the active surface (10A), having a thickness greater than a height of a portion of the feedthrough electrode (12) that projects from the active surface (10A), and having an opening portion (18H) for exposing at least a portion of the feedthrough electrode (12); a wiring layer (21) which is formed on the first resin layer (18), and which is connected to the feedthrough electrode (12) through the opening portion (18H); and an external connecting terminal (23) connected to the wiring layer (21). |
