| 发明名称 |
GaN growth on Si using ZnO buffer layer |
| 摘要 |
A method for forming group III-N articles includes the steps of providing a single crystal silicon substrate, depositing a zinc oxide (ZnO) layer on the substrate, and depositing a single crystal group III-N layer on the ZnO layer. At least a portion of the group III-N layer is deposited at a temperature of less than 600° C.
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| 申请公布号 |
US7001791(B2) |
申请公布日期 |
2006.02.21 |
| 申请号 |
US20030691353 |
申请日期 |
2003.10.22 |
| 申请人 |
UNIVERSITY OF FLORIDA |
发明人 |
KRYLIOUK OLGA;ANDERSON TIM;KIM KEE CHAN |
| 分类号 |
H01L21/00;C30B23/02;C30B25/02;C30B25/18;C30B29/16;C30B29/40;H01L21/20;H01L21/205;H01L33/00;H01L33/32 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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