发明名称 |
Method for limiting slip lines in a semiconductor substrate |
摘要 |
A method for limiting slip lines in a semiconductor substrate including a support layer and a useful semiconductor layer that is transferred to the support layer. The method includes precipitating at least a portion of interstitial oxygen in the support layer by a series of heat treatments conducted after bonding of the useful semiconductor layer to the support layer. The heat treatments occur at a temperature and a time sufficient to reduce the generation of slip lines therein.
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申请公布号 |
US7001832(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20040840610 |
申请日期 |
2004.05.05 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES S.A. |
发明人 |
NEYRET ERIC |
分类号 |
H01L21/425;H01L21/762 |
主分类号 |
H01L21/425 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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