发明名称 |
Mask schemes for patterning magnetic tunnel junctions |
摘要 |
Methods of patterning magnetic tunnel junctions (MTJ's) of magnetic memory devices that avoid shorting magnetic memory cells to upper levels of conductive lines during etching processes. One method involves using a hard mask having two material layers to pattern the lower magnetic material layers of an MTJ. The first material of the hard mask is thin and comprises an etch-resistant material. The second material of the hard mask deposited over the first material is thicker and is less etch-resistant than the first material. At least a portion of the second material is sacrificially removed during the etch process of the lower magnetic material layers. A conformal or non-conformal material may be used as the second material of the hard mask. The hard mask used to pattern lower magnetic materials of an MTJ may comprise a single layer of non-conformal material.
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申请公布号 |
US7001783(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20040868328 |
申请日期 |
2004.06.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
COSTRINI GREGORY;FINDEIS FRANK;LEE GILL YONG;PARK CHANRO |
分类号 |
H01L21/00;G11C11/15;H01L21/8246;H01L27/22;H01L43/12 |
主分类号 |
H01L21/00 |
代理机构 |
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主权项 |
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地址 |
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