发明名称 |
Method and system for single ion implantation |
摘要 |
This invention concerns a method and system for single ion doping and machining by detecting the impact, penetration and stopping of single ions in a substrate. Such detection is essential for the successful implantation of a counted number of <SUP>31</SUP>P ions into a semi-conductor substrate for construction of a Kane quantum computer. The invention particularly concerns the application of a potential across two electrodes on the surface of the substrate to create a field to separate and sweep out electron-hole pairs formed within the substrate. A detector is then used to detecting transient current in the electrodes, and so determine the arrival of a single ion in the substrate.
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申请公布号 |
US7002166(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20040484647 |
申请日期 |
2004.06.22 |
申请人 |
QUCOR PTY LTD |
发明人 |
JAMIESON DAVID NORMAN;PRAWER STEVEN;DZURAK ANDREW STEVEN;CLARK ROBERT GRAHAM;YANG CHANGYI |
分类号 |
H01J37/317;H01L21/265;B82B3/00;G01T1/00;G06N99/00;H01J37/304;H01L31/115 |
主分类号 |
H01J37/317 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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