发明名称 |
Method of forming a mask having nitride film |
摘要 |
A method of forming a mask comprises forming a mask layer including nitrogen, forming a photoresist pattern on the mask layer and etching the mask layer using a mixes gas including a first gas adapted for etching the mask layer and a second gas for increasing selectivity of the photoresist pattern, thereby forming a hard mask. In this manner, selectivity of the photoresist is improved while a high etching ratio of the nitride layer is maintained when forming a hard mask.
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申请公布号 |
US7001692(B2) |
申请公布日期 |
2006.02.21 |
申请号 |
US20020307850 |
申请日期 |
2002.12.02 |
申请人 |
SAMSUNG ELECTRONICS, CO., LTD. |
发明人 |
KWEAN SUNG-UN;HWANG JAE-SEUNG |
分类号 |
G03F9/00;G03C5/00;H01L21/027;H01L21/033;H01L21/302;H01L21/311;H01L21/461 |
主分类号 |
G03F9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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