| 摘要 |
FIELD: semiconductor microphotoelectronics. ^ SUBSTANCE: proposed method for manufacturing photodetector depending for its operation on accumulation of charge in potential wells includes production of diamond substrate in the form of wafer and deposition of metal contacts thereon. Diamond wafers chosen for substrate has nitrogen concentration not over 2 . 1019 cm-3. Some of these contacts are placed at substrate potential and are common for external circuit, and potential wells are made under other contacts for accumulating supports of charge divided at metal-to-semiconductor barrier by maintaining "floating" potential across these contacts relative to substrate. Proposed photodetector is characterized in reduced probability of detecting signal from false source ranging between hundreds of nm and 50 nm with sensitivity threshold brought to physical one at lambdamax = 220 nm. ^ EFFECT: reduced band of ultraviolet radiation detected by device. ^ 1 cl, 2 dwg |
