| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device which is so constructed as to prevent short circuit between contacts and a well around them in forming the contacts in bit line diffusion regions, and to provide a manufacturing method for the semiconductor memory device. SOLUTION: According to the semiconductor memory device, slots 118 are formed around the bit line diffusion regions in the area of p-well 101 forming a memory cell region that is not covered with word lines and selection gates crossing the word lines. The slots 118 are filled with an insulating film 119. COPYRIGHT: (C)2006,JPO&NCIPI
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