| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a susceptor excellent in uniformity of temperature distribution by decreasing voids in an aluminum nitride sintered compact as much as possible. <P>SOLUTION: The aluminum nitride sintered compact of the present invention is characterized in that the amounts of bismuth and chlorine contained are controlled each to be a fixed value or less, that is, the content of bismuth is ≤30 ppm and the content of chlorine is ≤100 ppm in the aluminum nitride sintered compact comprising aluminum nitride as a principal component. In this case, preferably a resistance heating element is formed in the aluminum nitride sintered compact, and the aluminum nitride sintered compact is preferably used as a heating component for a semiconductor. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
